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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies.
A
KHB4D0N65P/F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB4D0N65P
O C F E G B Q I
DIM MILLIMETERS _ 9.9 + 0.2 A 15.95 MAX B 1.3+0.1/-0.05 C _ D 0.8 + 0.1 _ E 3.6 + 0.2 _ F 2.8 + 0.1 3.7 G H 0.5+0.1/-0.05 1.5 I _ 13.08 + 0.3 J K 1.46 _ 1.4 + 0.1 L _ 1.27+ 0.1 M _ 2.54 + 0.2 N _ 4.5 + 0.2 O _ 2.4 + 0.2 P _ 9.2 + 0.2 Q
FEATURES
VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 Qg(typ.)=20nC @VGS = 10V
K M L J D N N
P
H
1
2
3
1. GATE 2. DRAIN 3. SOURCE
MAXIMUM RATING (Tc=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1)
)
RATING SYMBOL KHB4D0N65P KHB4D0N65F VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 106 0.85 150 -55 150
Q
UNIT 650 30 4.0 16 260 10.6 4.5 36 0.29 4.0* A 16*
E
TO-220AB
KHB4D0N65F
A
F
V V
C
O
DIM
B
MILLIMETERS
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25
mJ mJ V/ns W W/
D N N
K
L
M
J
R
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient
H
1
2
3
A B C D E F G H J K L M N O Q R
_ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2
RthJC RthJA
1.18 62.5
3.47 62.5
/W /W
* : Drain current limited by maximum junction temperature.
TO-220IS (1)
D
G
G
S
2007. 3. 26
Revision No : 1
1/7
KHB4D0N65P/F
ELECTRICAL CHARACTERISTICS (Tc=25
CHARACTERISTIC
)
TEST CONDITION MIN. TYP. MAX. UNIT
SYMBOL
Static
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain Cut-off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance BVDSS BVDSS/ Tj Vth IDSS IGSS RDS(ON) gFS ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=VGS, ID=250 A VDS=650V, VGS=0V, VGS= 30V, VDS=0V VGS=10V, ID=2.0A VDS=50V, ID=2.0A (Note4) 650 2.0 0.95 2.4 3.8 4.0 10 100 3.0 S V V/ V A nA
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGSNote 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =30mH, IS=4A, VDD=50V, RG=25 , Starting Tj=25 Note 3) IS 4.0A, dI/dt 200A/ Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%. . , VDD BVDSS, Starting Tj=25 .
Note 5) Essentially independent of operating temperature.
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Revision No : 1
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KHB4D0N65P/F
ID - VDS
10
1
VGS TOP : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom: 5.5V 0
ID - VGS
10
1
VDS = 50V 250s Pulse Test
Drain Current ID (A)
10
Drain Current ID (A)
10
0
150 C 25 C -55 C
10
-1
10
-1
10
0
10
1
10
-1
2
4
6
8
10
Drain - Source Voltage VDS (V)
Gate - Source Voltage VGS (V)
BVDSS - Tj
Normalized Breakdown Voltage BVDSS
1.2 6
VGS = 0V IDS = 250A
RDS(ON) - ID
On - Resistance RDS(ON) ()
5 4 3
VGS = 20V VGS = 10V
1.1
1.0
2 1 0
0.9
0.8 -100
-50
0
50
100
150
0
2
6
4
8
10
Junction Temperature Tj ( C )
Drain Current ID (A)
IS - VSD
10
1
RDS(ON) - Tj
3.0
VGS = 10V ID = 2.0A
Reverse Drain Current IS (A)
Normalized On Resistance
1.8
2.5 2.0 1.5 1.0 0.5
10
0
150 C
25 C
10
-1
VGS = 0V 250s Pulse Test
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0 -100
-50
0
50
100
150
Source - Drain Voltage VSD (V)
Junction Temperture Tj ( C)
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Revision No : 1
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KHB4D0N65P/F
C - VDS
12
Qg- VGS
Gate - Source Voltage VGS (V)
ID = 4.0A VDS = 130V VDS = 325V VDS = 520V
10
3
Ciss
10 8 6 4 2 0
Capacitance (pF)
Coss
101
Crss
10-1 10-1
100
101
102
0
5
10
15
20
Drain - Source Voltage VDS (V)
Gate - Charge Qg (nC)
Safe Operation Area
(KHB4D0N65P)
Operation in this area is limited by RDS(ON)
Safe Operation Area
(KHB4D0N651)
Operation in this area is limited by RDS(ON) 100s
Drain Current ID (A)
101
Drain Current ID (A)
101
100s
1ms
10ms
100
1ms 10ms 100ms DC
100
Tc= 25 C Tj = 150 C Single nonrepetitive pulse
DC
10-1
Tc= 25 C Tj = 150 C Single nonrepetitive pulse
10-1 100
101
102
103
10-2 0 10
101
102
103
Drain - Source Voltage VDS (V)
Drain - Source Voltage VDS (V)
ID - Tj
4
Drain Current ID (A)
3
2
1
0 25
50
75
100
125
150
Junction Temperature Tj ( C)
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Revision No : 1
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KHB4D0N65P/F
Rth
{KHB4D0N65P1} Transient Thermal Resistance [ C / W]
100
Duty=0.5
0.2
10-1
0.1
0.05
PDM t1 t2
0.02
0.0
1
S
le ing
Pu
lse
- Duty Factor, D= t1/t2 - RthJC = 10-3 10-2 10-1 Tj(max) - Tc PD 100 101
10-2 10-5 10-4
Square Wave Pulse Duration (sec)
Rth
{KHB4D0N65F}
Transient Thermal Resistance [ C / W]
Duty=0.5
100
0.2
0.1
10-1
0.05
0.02
0.01
le ing Pu lse
PDM t1 t2
S
- Duty Factor, D= t1/t2 Tj(max) - Tc - RthJC = PD 10-3 10-2 10-1 100 101
10-2 10-5
10-4
Square Wave Pulse Duration (sec)
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Revision No : 1
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KHB4D0N65P/F
- Gate Charge
VGS Fast Recovery Diode 10 V
ID
0.8 VDSS 1.0 mA
ID
VDS Qgs VGS Qgd Qg
Q
- Single Pulsed Avalanche Energy
EAS=
1 LIAS2 2
BVDSS BVDSS - VDD
BVDSS
L
IAS
0.5 VDSS
25 VDS ID(t)
VDD
10 V VGS
VDS(t)
Time tp
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Revision No : 1
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KHB4D0N65P/F
- Resistive Load Switching
VDS RL 0.5 VDSS 25 VGS 10% td(on) VGS ton tr 90%
VDS
tf td(off) toff
10V
- Source - Drain Diode Reverse Recovery and dv /dt
Body Diode Forword Current DUT VDS IF
ISD (DUT)
IRM
di/dt
0.8 x VDSS
driver
IS VDS (DUT)
Body Diode Reverse Current
Body Diode Recovery dv/dt VSD
10V
VGS Body Diode Forword Voltage drop
VDD
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Revision No : 1
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